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FP1189
1/2-Watt HFET
The Communications Edge TM Product Information
Product Features
50 - 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package * MTTF >100 Years * * * * * *
Product Description
The FP1189 is a high performance 1/2-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz. The device conforms to WJ Communications' long history of producing high reliability and quality components. The FP1189 has an associated MTTF of greater than 100 years at a mounting temperature of 85 C and is available in both the standard SOT-89 package and the environmentallyfriendly lead-free/green/RoHS-compliant and green SOT89 package. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
Functional Diagram
GND 4
1 RF IN
2 GND
3 RF OUT
Applications
* * * * * * Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless
Function Input / Gate Output / Drain Ground
Pin No. 1 3 2, 4
Specifications
DC Parameter
Saturated Drain Current, Idss (1) Transconductance, Gm Pinch Off Voltage, Vp (2)
Typical Performance (5)
Units Min
mA mS V 220
Typ
290 155 -2.1
Max
360
Parameter
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (4) Noise Figure IS-95 Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dB dBm
Typical
915 1960 2140 2450 20.6 15.7 14.7 13.2 13 26 24 36 6.0 9.6 9.0 7.6 +27.4 +27.2 +27.2 +28.1 +39.9 +40.4 +39.7 +40.0 2.7 3.7 4.3 +21 +20.8 +18.4
RF Parameter (3)
Operational Bandwidth Test Frequency Small Signal Gain SS Gain (50 , unmatched) Maximum Stable Gain Output P1dB Output IP3 (4) Noise Figure Drain Bias
Units Min
MHz MHz dB dB dB dBm dBm dB 50
Typ
800 20.5
Max
4000
17
21
24 +27.4 +40 2.7 +8 V @ 125 mA
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage Drain Current
V mA
+8 125
5. Typical parameters represent performance in a tuned application circuit.
1. Idss is measured with Vgs = 0 V, Vds = 3 V. 2. Pinch-off voltage is measured when Ids = 1.2 mA. 3. Test conditions unless otherwise noted: T = 25C, VDS = 8 V, IDQ = 125 mA, in a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power). 4. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature DC Power RF Input Power (continuous) Drain to Gate Voltage, Vdg Junction Temperature
Rating
-40 to +85 C -55 to +150 C 2.0 W 6 dB above Input P1dB +16 V +220 C
Ordering Information
Part No.
FP1189-G FP1189-PCB900S FP1189-PCB1900S FP1189-PCB2140S
Description
1/2 -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 package)
870 - 960 MHz Application Circuit 1930 - 1990 MHz Application Circuit 2110 - 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 11 October 2006
FP1189
1/2-Watt HFET
The Communications Edge TM Product Information
Typical Device Data
S-Parameters (VDS = +8 V, IDS = 125 mA, T = 25 C, calibrated to device leads)
S11
0.8
S22
2. 0
0 3.
S21, MSG (dB)
10.0
10 5 0 0 1 2 3 4 Frequency (GHz) 5 6
DB(|S[2,1]|) DB(MSG)
-0. 2
.4 -0
.4 -0
.0 -2
-0.8
Swp Min 0.05GHz
-0.8
-1.0
Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device. Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S11 (mag) S11 (ang) S21 (mag) S21 (ang) S12 (mag) S12 (ang) S22 (mag) 1.000 -4.52 10.313 176.55 0.002 87.44 0.544 0.988 -21.51 10.120 163.88 0.010 76.64 0.535 0.959 -42.21 9.681 148.45 0.020 64.73 0.520 0.933 -61.23 9.005 134.71 0.028 53.45 0.495 0.895 -78.75 8.270 122.08 0.035 44.25 0.469 0.860 -95.09 7.561 109.58 0.040 34.30 0.447 0.848 -109.61 7.028 99.15 0.044 26.69 0.428 0.821 -122.91 6.408 88.96 0.046 19.57 0.407 0.807 -135.32 5.950 79.64 0.048 13.93 0.400 0.796 -147.01 5.474 70.37 0.049 7.21 0.386 0.785 -157.00 5.087 62.43 0.050 2.99 0.374 0.780 -166.26 4.732 53.97 0.050 -1.58 0.376 0.775 -175.87 4.415 45.54 0.049 -6.79 0.369 0.766 175.78 4.082 38.18 0.049 -9.36 0.368 0.770 167.34 3.843 30.76 0.048 -12.48 0.372 0.771 159.87 3.602 23.91 0.050 -14.97 0.369 0.771 152.07 3.408 16.74 0.050 -17.53 0.374 0.771 145.63 3.241 9.15 0.048 -19.53 0.382 0.772 138.97 3.053 2.49 0.048 -21.27 0.387 0.770 132.07 2.876 -4.50 0.050 -23.00 0.396 0.780 126.56 2.743 -10.47 0.048 -25.08 0.408 0.794 120.21 2.622 -17.28 0.049 -26.64 0.412 0.795 114.22 2.507 -24.43 0.051 -30.44 0.423 0.794 108.27 2.346 -31.21 0.052 -30.16 0.442 0.798 102.86 2.237 -36.95 0.052 -31.18 0.446 Device S-parameters are available for download off of the website at: http://www.wj.com S22 (ang) -3.02 -13.77 -27.13 -39.31 -50.54 -60.96 -70.64 -79.82 -88.93 -97.59 -105.24 -113.47 -121.84 -129.77 -137.25 -144.61 -152.17 -161.00 -168.31 -175.08 177.65 170.89 162.41 154.66 147.41
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 11 October 2006
-1.0
1
-0 .
-0.
. -2
6
6
0
-3 .
0
-3 .0
2
Swp Min 0.05GHz
-4
2
.0
1
-
5. 0
-0 -5.
.2
3
-1 0.0
-10.0
3
0
5 4
10.0
15
0.2 0
4
0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0 .2
-4 .0
0.2
20
5
0 4.
5.0
0. 4
0. 4
25
6
2. 0
30
0.6
0.
6
0. 8
S21, Maximum Stable Gain vs. Frequency
Swp Max 6GHz
1.0
1.0
Swp Max 6GHz
3.
0
4.
0
5.
0
6
10.0
FP1189
1/2-Watt HFET
The Communications Edge TM Product Information
Application Circuit: 870 - 960 MHz (FP1189-PCB900S)
The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+12 dBm / tone, 1 MHz spacing)
MHz dB dB dB dBm dBm dB dBm
870 20.9 -10 -5.2 +27.5
915 20.6 -13 -6.0 +27.4 +39.9
960 19.8 -10 -7.6 +27.5
Noise Figure IS-95 Channel Power
@ -45 dBc ACPR
2.7
2.7 +21
2.6
-Vgg
CAP ID=C10 C=DNP pF CAP ID=C4 C=100 0 p F CAP ID=C3 C= 6 8 p F RES ID=R1 R=20 Ohm
Vds = 8 V @ 125 mA
CAP ID=C11 C=1e5 pF CAP ID= C8 C= 1000 pF CAP ID=C2 C=18 pF CAP ID= C7 C= 68 pF CAP ID= C6 C= 18 pF
IND ID= L1 L=47 nH PORT P= 1 Z=50 Ohm CAP ID=C1 C= 68 pF IND ID=L4 L=12 nH RES ID= R2 R= 10 Ohm
1
SUBCKT ID=Q1 NET="FP1189"
2
RES ID=L2 R=0 Ohm
IND ID=L3 L=47 nH
CAP ID=C9 C=68 pF
PORT P= 2 Z=50 Ohm
CAP ID=C13 C=3.9 pF
CAP ID=C12 C=DNP pF
CAP ID= C5 C= DNP pF
Bill of Materials
Ref. Desig. C1, C3, C7, C9 C2, C6 C4, C8 C11 C13 L1, L3 L2 L4 R1 R2 Q1 C5, C12, C10 Value 68 pF 18 pF 1000 pF 0.1 F 3.9 pF 47 nH 0 12 nH 10 20 FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Chip resistor Multilayer chip inductor Chip resistor Chip resistor WJ 0.5W HFET Do Not Place Size 0603 0603 0603 1206 0603 0603 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50
.
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 11 October 2006
FP1189
1/2-Watt HFET
S11 vs. Frequency S21 vs. Frequency
The Communications Edge TM Product Information
FP1189-PCB900S Application Circuit Performance Plots
S22 vs. Frequency
0 -5 S11 (dB) -10 -15 -20 -25 -30 860 880 900 920 940 960 Frequency (MHz)
P1dB vs. Frequency -40c +25c +85c
22 21 S21 (dB) 20 19 18
-40c +25c +85c
0 -5 S22 (dB) -10 -15 -20 -25 -30 880 900 920 940 960 860 880 Frequency (MHz)
Noise Figure vs. Frequency -40c +25c +85c
17 860
900
920
940
960
Frequency (MHz)
ACPR vs. Channel Power -30 -40 -50 -60 -40 C -70 +25 C 20 21 22 +85 C 23 24
IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW
30 28 P1dB (dBm) 26 24 22
-40c +25c +85c
6 5 NF (dB) 4 3 2 1 0 880 900 920 940 960 860 880 900 920 940 960 Frequency (MHz)
OIP3 vs. Temperature -40c +25c +85c ACPR (dBc)
freq = 915 MHz
20 860
16
17
18
19
Frequency (MHz)
IMD products vs. Output Power -20 IMD products (dBm)
fundamental frequency = 915 MHz, 916 MHz; Temp = +25C
Output Channel Power (dBm) OIP3 vs. Output Power 45 40 35 30 25
fundamental frequency = 915 MHz, 916 MHz; Temp = +25C
42 40 OIP3 (dBm) 38 36 34 32 -40 -15 10 35 60 85 Temperature ( C)
Output Power / Gain vs. Input Power
22 20
frequency = 915 MHz, Temp = -40C
-40
-60
freq = 915, 916 MHz +12 dBm / tone
IMD_Low IMD_High
-80 0 4 8 12 16 Output Power (dBm) 20 24
OIP3 (dBm)
0
4
8 12 16 Output Power (dBm)
20
24
Output Power / Gain vs. Input Power 30 Output Power (dBm) 26 22 18
22 20
frequency = 915 MHz, Temp = +25C
Output Power / Gain vs. Input Power 30 Output Power (dBm) 26 22 18
22 20
frequency = 915 MHz, Temp = +85C
30 26 Output Power (dBm)
Gain (dB)
Gain (dB)
18 16 14 12 -12 -8 -4 0 4 Input Power (dBm) 8 12
18 16 14 12 -12 -8 -4 0 4 Input Power (dBm) 8 12
Gain (dB)
Gain
Gain
Gain 22 18 Output Power
-8 -4 0 4 Input Power (dBm) 8 12
18 16 14 12 -12
Output Power
14 10
Output Power
14 10
14 10
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 11 October 2006
FP1189
1/2-Watt HFET
The Communications Edge TM Product Information
Application Circuit: 1930 - 1990 MHz (FP1189-PCB1900S)
The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+12 dBm / tone, 1 MHz spacing)
MHz dB dB dB dBm dBm dB dBm
1930 15.8 -26 -9.2 +27.4
1960 15.7 -26 -9.6 +27.2 +40.4 3.7 +20.8
1990 15.5 -24 -9.0 +27.4
Noise Figure IS-95 Channel Power
@ -45 dBc ACPR
CAP CAP CAP ID=C4 ID=C3 ID=C10 C=33 pF C=DNP pF C=DNP pF -Vgg
Vds = 8 V @ 125 mA CAP ID=C11 C=1e5 pF CAP ID=C12 C=DNP pF
RES ID=R1 R=100 Ohm CAP ID=C13 C=DNP pF CAP ID=C2 C=DNP pF IND ID=L1 L=22 nH
CAP ID=C8 C=DNP pF CAP ID=C7 C=DNP pF CAP ID=C6 C=33 pF IND ID=L3 L=22 nH
SUBCKT ID=Q1 NET="FP1189"
2
PORT P=1 Z=50 Ohm
CAP ID=C1 C=33 pF
IND ID=L2 L=2.7 nH
CAP ID=C9 C=33 pF
PORT P=2 Z=50 Ohm
1
CAP ID=C15 C=1.8 pF
CAP ID= C13 C=DNP pF
RES ID=R2 R=10 Ohm
CAP ID=C5 C=0.5 pF
Bill of Materials
Ref. Desig. C1, C4, C6, C9 C5 C11 C15 L1, L3 L2 R1 R2 Q1 C2, C3, C7, C8, C10, C12, C13, C14 Value 33 pF 0.5 pF 0.1 F 1.8 pF 22 nH 2.7 nH 100 10 FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip inductor Chip resistor Chip resistor WJ 0.5W HFET Do Not Place Size 0603 0603 1206 0603 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50
.
Specifications and information are subject to change without notice.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 5 of 11
October 2006
FP1189
1/2-Watt HFET
S11 vs. Frequency S21 vs. Frequency
The Communications Edge TM Product Information
FP1189-PCB1900S Application Circuit Performance Plots
S22 vs. Frequency
0 -5 S11 (dB) -10 -15 -20 -25 -30 1930 1950 1970 1990 Frequency (MHz)
P1dB vs. Frequency -40C +25C +85C
17 16 S21 (dB) 15 14 13
-40C +25C +85C
0 -5 S22 (dB) -10 -15 -20 -25 -30 1950 1970 1990 1930 Frequency (MHz)
Noise Figure vs. Frequency -40C +25C +85C
12 1930
1950
1970
1990
Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW
30 28 P1dB (dBm) 26 24 22
-40C +25C +85C
6 5 NF (dB) 4 3 2 1 0 1950 1970 1990 1930 1950 1970 1990 Frequency (MHz)
OIP3 vs. Temperature -40C +25C +85C
-30 ACPR (dBc) -40 -50 -60 -70
freq = 1960 MHz
-40 C
+25 C
+85 C
20 1930
16
17
18
19
20
21
22
23
24
Frequency (MHz)
IMD products vs. Output Power -20 IMD products (dBm)
fundamental frequency = 1960, 1961 MHz; Temp = +25C
Output Channel Power (dBm)
OIP3 vs. Output Power 45 40 35 30
fundamental frequency = 1960, 1961 MHz; Temp = +25C
42 40 OIP3 (dBm) 38 36 34 32 -40 -15 10 35 60 85 Temperature ( C)
Output Power / Gain vs. Input Power 18 16 Gain (dB) 14 12 10 8 -4 0 4 8 12 Input Power (dBm) 16 20 Output Power Gain
frequency = 1960 MHz, Temp = -40C
-40
-60
freq = 1960, 1961 MHz +12 dBm / tone
IMD_Low IMD_High
-80 0 4 8 12 16 Output Power (dBm) 20 24
OIP3 (dBm)
25 0 4 8 12 16 Output Power (dBm) 20 24
Output Power / Gain vs. Input Power 30 Output Power (dBm) 26 22 18 14 10 18 16 Gain (dB) 14 12 10 8 -4 0 4 8 12 Input Power (dBm) 16 20 Output Power Gain
frequency = 1960 MHz, Temp = +25C
Output Power / Gain vs. Input Power 30 Output Power (dBm) 26 22 18 14 10
18 16
frequency = 1960 MHz, Temp = +85C
30 26 Output Power (dBm)
Gain (dB)
14 12 10
Gain
22 18 14 Output Power 10
8 -4 0 4 8 12 Input Power (dBm) 16 20
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 11 October 2006
FP1189
1/2-Watt HFET
The Communications Edge TM Product Information
Application Circuit: 2110 - 2170 MHz (FP1189-PCB2140S)
The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+12 dBm / tone, 1 MHz spacing)
MHz dB dB dB dBm dBm dB dBm
2110 14.7 -24 -7.6 +27.1
2140 14.7 -24 -9.0 +27.2 +39.7
2170 14.7 -24 -9.8 +26.8
Noise Figure W-CDMA Channel Power
@ -45 dBc ACPR
4.2
4.3 +18.4
4.2
-Vgg RES ID=R1 R =100 Ohm C AP ID=C11 C=DNP pF C AP ID=C2 C=DNP pF IND ID=L1 L=18 nH
CAP ID=C3 C=33 pF
Vds = 8 V @ 125 mA CAP ID=C8 C=1e5 pF CAP ID=C7 C=22 pF CAP ID=C6 C=DNP pF IND ID=L2 L=18 nH
SUBCKT ID=Q1 NET="FP1189" RES ID=R2 R=10 Ohm
1 2
PORT P=1 Z=50 Ohm
CAP ID=C1 C=22 pF
I ND ID=L3 L=2.7 nH
CAP ID=C9 C=22 pF
PORT P=2 Z=50 Ohm
CAP ID=C10 C=1.5 pF
CAP ID=C4 C=DNP pF
CAP ID=C5 C=0.5 pF
Bill of Materials
Ref. Desig. C1, C7, C9 C3 C5 C8 C10 L1, L2 L3 R1 R2 Q1 C2, C4, C6, C11 Value 22 pF 33 pF 0.5 pF 0.1 F 1.5 pF 18 nH 2.7 nH 100 10 FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip resistor Chip resistor Chip resistor WJ 0.5W HFET Do Not Place Size 0603 0805 0603 1206 0603 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50
.
Specifications and information are subject to change without notice.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 7 of 11
October 2006
FP1189
1/2-Watt HFET
S11 vs. Frequency S21 vs. Frequency
The Communications Edge TM Product Information
FP1189-PCB2140S Application Circuit Performance Plots
S22 vs. Frequency
0 -5 S11 (dB) -10 -15 -20 -25 -30 2110 2130 2150 2170 Frequency (MHz)
P1dB vs. Frequency -40c +25c +85c
16 15 S21 (dB) 14 13 12
-40c +25c +85c
0 -5 S22 (dB) -10 -15 -20 -25 -30 2130 2150 2170 2110 Frequency (MHz)
Noise Figure vs. Frequency -40c +25c +85c
11 2110
2130
2150
2170
Frequency (MHz)
ACPR vs. Channel Power -35 -40 ACPR (dBc) -45 -50 -55 -60 -65 -40 C 13 14 15 16 17 +25 C 18 19 +85 C 20 21
3GPP W-CDMA, Test Model 1 +64 DPCH, 5 MHz offset
30 28 P1dB (dBm) 26 24 22
-40C +25C +85C
6 5 NF (dB) 4 3 2 1 0 2130 2150 2170 2110 2130 2150 2170 Frequency (MHz)
OIP3 vs. Temperature -40c +25c +85c
freq = 2140 MHz
20 2110
Frequency (MHz)
Output Power / Gain vs. Input Power
16 14
frequency = 2140 MHz, Temp = +25C
Output Channel Power (dBm) OIP3 vs. Output Power 30 26 Output Power (dBm) 45 40 35 30 25 0 4 8 12 16 Output Power (dBm) 20 24
fundamental frequency = 1960, 1961 MHz; Temp = +25C
42 40 OIP3 (dBm) 38 36 34 32 -40 -15 10 35 60 85 Temperature ( C)
Output Power / Gain vs. Input Power 16 14 Gain (dB) Gain 22 18 Output Power 0 4 8 12 16 Input Power (dBm) 20 14 10 12 10 8 6
frequency = 2140 MHz, Temp = -40C
Gain (dB)
Gain 22 18 Output Power 14 10
0 4 8 12 16 Input Power (dBm) 20
12 10 8 6
freq = 2140, 2141 MHz +12 dBm / tone
IMD products vs. Output Power 30 Output Power (dBm) 26 -20 IMD products (dBm)
fundamental frequency = 2140, 2141 MHz; Temp = +25C
OIP3 (dBm)
Output Power / Gain vs. Input Power
16 14
frequency = 2140 MHz, Temp = +85C
30 26 Output Power (dBm)
Gain (dB)
-40
12 10 8
Gain
22 18 14
-60
IMD_Low IMD_High
Output Power
6
-80 0 4 8 12 16 Output Power (dBm) 20 24
10
0 4 8 12 16 Input Power (dBm) 20
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 8 of 11 October 2006
FP1189
1/2-Watt HFET
Typical RF Performance, 25C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+12 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
Reference Design: 2450 MHz
The application circuit is matched for output power.
S-Parameters
MHz dB dB dB dBm dBm V mA
2450 2450 13.2 -36 -7.6 +27.5 +28.1 +38 +8 100 +40 +8 125
15 10 5 0 -5 -10 -15 -20 -25 -30 2200 2300
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Drain Voltage Drain Current
The 2450 MHz Reference Circuit is shown for design purposes only. An evaluation board is not readily available for this application. The reader can obtain an FP1189-PCB2140S evaluation board and modify it with the circuit shown to achieve the performance shown in this reference design. Only two component changes are required (C4 and L3) from the FP1189-PCB2140S evaluation board.
2400 2500 Frequency (MHz)
2600
2700
Vds = 8 V @ 125 mA
-Vgg RES ID =R1 R =100 Ohm
CAP ID =C3 C =33 pF
CAP ID =C8 C =100000 pF CAP ID =C6 C =DN P pF CAP ID =C7 C =22 pF
CAP ID =C2 C =DN P pF
POR T P=1 Z=50 Ohm
CAP ID =C1 C =22 pF
IN D ID =L1 L=18 nH
TLINP ID =TL1 Z0=50 Ohm L=13 5 mil Eef f=4.2 Loss=0 F0=0 MHz
RES ID =R2 R =10 Ohm
1
2
TLINP ID =TL3 Z0=50 Ohm L=8 0 mil Eef f=4.2 Loss=0 F0=0 MHz
IN D ID =L3 L=1.8 nH
TLINP ID =TL4 Z0=50 Ohm L=3 5 mil Eef f=4.2 Loss=0 F0=0 MHz
IN D ID =L2 L=18 nH
POR T P=2 Z=50 Ohm
CAP ID=C4 C =1.2 pF
TLINP I D =T L2 Z 0=5 0 Ohm L =4 5 mil Eef f=4 .2 L os s=0 F 0=0 M Hz
CAP ID =C5 C =0.5 pF SU BC KT ID =Q1 NET="FP1189"
CAP ID =C7 C =22 pF
The lengths shown in the microstrip lines are referenced from the component or pin edge-to-edge.
Bill of Materials
Ref. Desig. C1, C7, C9 C3 C4 C5 C8 L1, L2 L3 R1 R2 Q1 C2, C4, C6, C11 Value 22 pF 33 pF 1.2 pF 0.5 pF 0.1 F 18 nH 1.8 nH 100 10 FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip resistor Chip resistor Chip resistor WJ 0.5W HFET Do Not Place Size 0603 0805 0603 0603 1206 0603 0603 0603 0603 SOT-89
C4
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50 .
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 9 of 11 October 2006
FP1189
1/2-Watt HFET
Special attention should be taken to properly bias the FP1189. Power supply sequencing is required to prevent the device from operating at 100% Idss for a prolonged period of time and possibly causing damage to the device. It is recommended that for the safest operation, the negative supply be "first on and last off." With a negative gate voltage present, the drain voltage can then be applied to the device. The gate voltage can then be adjusted to have the device be used at the proper quiescent bias condition. An optional active-bias current mirror is recommended for use with the application circuits shown in this datasheet. Generally in a laboratory environment, the gate voltage is adjusted until the drain draws the recommended operating current. The gate voltage required can vary slightly from device to device because of device pinchoff variation, while also varying slightly over temperature. The active-bias circuit, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP1189, while also eliminating the effects of pinchoff variation. This configuration is best suited for applications where the intended output power level of the amplifier is backed off at least 6 dB away from its compression point. With the implementation of the circuit, lower P1dB values may be measured for a Class-AB amplifier, where the device will attempt to source more drain current while the circuit tries to provide a constant drain current. The circuit should be connected directly in line with where the voltage supplies would be normally connected with the amplifier circuit, as shown the diagram. Any required matching circuitry remains the same, although it is not shown in the diagram. This recommended active-bias constant-current circuit adds 7 components to the parts count for implementation, but should cost only an extra $0.144 to realize ($0.10 for U1, $0.0029 for R1, R3, R4, R5, $0.024 for R2, and $0.0085 for C1). Temperature compensation is achieved by tracking the voltage variation with the temperature of the emitter-to-base junction of the two PNP transistors. As a 1st order approximation, this is achieved by using matched transistors with approximately the same Ibe current. Thus the transistor emitter voltage adjusts the HFET gate voltage so that the device draws a constant current, regardless of the temperature. A Rohm dual transistor - UMT1N - is recommended for cost, minimal board space requirements, and to minimize the variation between the two transistors. Minimizing the variability between the base-to-emitter junctions allow more accuracy in setting the current draw. More details can be found in a separate application note "Active-bias Constant-current Source Recommended for HFETs" found on the WJ website.
The Communications Edge TM Product Information
Application Note: Constant-Current Active-Biasing
+Vdd
R1
R2
U1
4 Rohm UMT1N 1 2
5
C1 .01 F
3
6
R4 1 k R3 R5 RF IN
M.N.
RF OUT
DUT
M.N.
-Vgg
HFET Application Circuit
Parameter Pos Supply, Vdd Neg Supply, Vgg Vds Ids R1 R2 R3 R4 R5
FP1189 +8 V -5 V +7.75 V 125 mA 62 2.0 1.8 k 1 k 1 k
Specifications and information are subject to change without notice.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 10 of 11
October 2006
FP1189
1/2-Watt HFET
The Communications Edge TM Product Information
FP1189-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The FP1189-G will be marked with an "FP11G" designator. An alphanumeric lot code ("XXXX-X") is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an "FP1189" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
MSL / ESD Rating Land Pattern
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes at 2000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2)
MTTF vs. GND Tab Temperature 100
-40 to +85 C 68 C/W 153 C
M T T F (m illio n h rs )
Rating
10
1
1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical drain biasing condition of +8V, 125 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C.
0 60 70 80 90 100 110 Tab Temperature (C) 120
Specifications and information are subject to change without notice.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 11 of 11
October 2006

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